Description
The objective of this activity is to demonstrate the suitability of European silicon technology for channel amplifiers and linearisers used in telecom payloads.
Targeted improvements:
- Mass reduction > 25%,
- Manufacturing time reduction > 25%,
- Expected cost reduction > 25%.
Channel amplifiers (CAMPs) and linearisers are elementary parts of the RF power chain for telecom satellites. CAMPs provide gain adjustment/control and consist of a set of gallium arsenide (GaAs) monolithic integrated circuits (MMICs) combined with silicon (Si) based integrated circuits (ICs), which provide the TM/TC interface. CAMP equipment is complex (many interface lines) as compared to other equipment like frequency converters and receivers. On the other hand, linearisers are usually based on a single GaAs MMIC and are either implemented as part of a travelling wave tube amplifier (TWTA) or combined with the CAMPs.
Fairly complex Si RF circuits (up to mm-wave range), including a "corechips" function (amplitude and phase control plus switches), have been demonstrated. The known limitations of Si as compared to GaAs are higher noise figure and lower power gain, but these performance parameters are not critical for both CAMPs and linearisers. Additionally, the higher integration density of Si (as compared to GaAs) will allow the implementation of more advanced lineariser concepts.
The Si implementation of the CAMP may lead to a single chip solution as compared to the mixed circuit technology of today. This should lead to a size and mass reduction and to a significant reduction in the manufacturing time and cost.
The work logic is:
1 - Analysis of current CAMPs and linearisers, as well as similar functions that could be implemented on Si;
2 - Identification of a suitable European Si technology provider;
3 - Design of Si-based CAMP and lineariser for Ku- and Ka-band;
4 - Manufacture and test of the circuits;
5 - Assessment against expected performance and development roadmap.