The objective of the activity is to design, develop and test 2W and 4W European Gallium Nitride (GaN) Ka-band high poweramplifier prototypes for Very Small Aperture Terminals (VSAT).
Targeted Improvements: Enabling a European Source of Ka-band 2W and 4W HPAs.
Contemporary Ka-band satellite communication systems require Very Small Aperture Terminals (VSAT) of high-transmitted power to maintain continuous connection and comply with the system link budget requirements. In the past Ka-band VSAT High Power Amplifiers (HPAs) were based on Gallium Arsenide (GaAs) technology available from many vendors in the world. GaAs is now superseded by the Gallium Nitride (GaN) technology for most power amplifier applications up to Ka and even higher, as GaN is offering a better efficiency and smaller chip size (due to higher power density).
It also offers the capability to design HPAs at power levels that cannot be reached with GaAs. GaN processes able to operate up to 30GHz and beyond are now available from vendors in Europe. Hence this activity shall develop and validate by means of test, 2W and 4W Ka-band packaged HPAs targeting VSAT applications, as well as demonstrate a viable European alternative to existing non-European products.
Procurement Policy: C(1) = Activity restricted to non-prime contractors (incl. SMEs). For additional information please go to EMITS news "Industrial Policy measures for non-primes, SMEs and RD entities in ESA programmes".